^s.mi-donducto'i ^pioducu, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 PN4250A to-92 pnp general purpose amplifier this device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 ma. sourced from process 68. see pn200 for characteristics. absolute maximum ratings* ta = 25c unless otherwise noted symbol vceo vcbo vebo ic tj, tstg parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current- continuous operating and storage junction temperature range value 60 60 5.0 500 -55to-c150 units v v v ma c these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits- the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta - 25c unless otherwise noted symbol pd rujc rflja characteristic total device dissipation derate above 25c thermal resistance, junction to case thermal resistance, junction to ambient max PN4250A 625 5.0 83.3 200 units mw mw7c c/w c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics pnp general purpose amplifier (continued) ta = 25c unless otherwise noted symbol parameter test conditions min max units off characteristics v(br)ceo v(br)ces v(br)cbo v(br)ebo icbo iebo collector-emitter breakdown voltaqe* collector-emitter breakdown voltage* collector-base breakdown voltage emitter-base breakdown voltage collector-cutoff current emitter-cutoff current lc = 5.0 ma, ib =0 ic = 10 na, ib = 0 lc = 10ua, ie = 0 le = 10 ha, lc = 0 vcb = 50 v, ie = 0 vee =3.0v, lc=0 60 60 60 5.0 10 20 v v v v na na on characteristics* hfe vce(sat) dc current gain collector-emitter saturation voltage vce = 5.0 v, lc = 100 |ia ic = 10 ma, ib = 0.5 ma 250 700 0.25 v small signal characteristics cob hfe hia hoe hre nf output capacitance small-signal current gain input impedance output admittance voltage feedback ratio noise figure vcb = 5.0v, f = 1.0mhz vce = 5.0v, lc = 1.0 ma, f = 1.0 khz vce = 5.0 v, lc = 250 p.a, rs = 1.0kn, f = 1.0 khz, bw = 150 hz vce = 5.0 v, lc = 20 na, rs = 10 kn, f = 1.0 khz, bw = 150 hz 250 6.0 5.0 6.0 800 20 50 10 2.0 2.0 pf kj (imhos x10"* db db pulse test: pulse width < 300 |is, duty cycle < 2.0%
to-92 (fs pkg code 92, 94, 96) 1:1 scale 1:1 on letter size paper dimensions shown below are in: inches [millimeters] part weight per unit (gram): 0.1977 to-92 (92.94,96) z d- 1 2 3 92 b e b c r d s g 94 b e c b f d g s 96 b b e c f s d g 0.030 0.014 00.060 [01.52] 0.010 [0.254] 0.055 0.045 0.095 2-41 i 0.084 2.13 ? '
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